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属性和电气STUDYOF IN2S3 / SNO2 /玻璃基板

文摘

In2S3电影SnO2 pyrex基体上沉积了真空热蒸发技术。影响是用于光伏应用。不同的表征方法使用:光学性质的电影从透光率进行了测量,通过XRD结构属性,和表面形态的扫描电镜显微分析。x射线衍射显示结晶电影In2S3相对应。根据扫描电镜图像,这部电影非常紧凑,homogeneus微观结构。霍尔效应的电测量显示,电阻率约为0.9我‚´10-3Ω。厘米,tIn2S3电影SnO2 pyrex基体上沉积了真空热蒸发技术。影响是用于光伏应用。不同的表征方法使用:光学性质的电影从透光率进行了测量,通过XRD结构属性,和表面形态的扫描电镜显微分析。x射线衍射显示结晶电影In2S3相对应。 According to SEM image, the film is very compact and homogeneus microstructure. Electrical measurements by Hall effect shows that resistivity is about 0.910-3Ω.cm, the mobility is 49.3cm2/Vsand the concentration of carriers is 1.41019cm-3. The determination of the carrier type by the hot point and hall effect gives the same result. The layer has a rather low resistance of 60 Ω. The conductance and capacitancecharacterization at ambient temperature in dark and under illumination were also investigated and gives interest physical properties for photovoltaic applications.he mobility is 49.3cm2/Vsand the concentration of carriers is 1.41019cm-3. The determination of the carrier type by the hot point and hall effect gives the same result. The layer has a rather low resistance of 60 Ω. The conductance and capacitancecharacterization at ambient temperature in dark and under illumination were also investigated and gives interest physical properties for photovoltaic applications.

答:Timoumi

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