研究和评论:材料科学杂雷竞技苹果下载志》上
菜单ISSN: 2321 - 6212
ISSN: 2321 - 6212
Yong-Hoon曹
韩国先进科学技术研究所(韩科院),韩国
海报和接受抽象:启J垫。Sci >,
DOI:10.4172 / 2321 - 6212 c1 - 006
集团III-nitride基础低维半导体纳米结构吸引了大量的关注由于其独特的光学特性和他们的多才多艺的经典和量子光学的应用程序。在这里,我们提供了各种氮量子纳米结构生长在锥体,环形,柱状,锥形结构作为模板。首先,我们展示了多色发光二极管(led)和宽带可见基于氮化镓六角nano-pyramid和六角环形结构。金字塔led发出一种宽带频谱起源于量子点(量子点),量子线和量子井(QWs)与不同的发射波长,在顶部,形成的边缘,分别和胎侧的金字塔。环和双同心截锥体led提供宽带,白光一代从QWs上形成不同的飞机。红色发射使用InGaN在氮化镓/氮化镓双异质结构nano-pyramid结构也被观察到。第二,GaN-based杆结构直接生长在硅基板不使用任何催化剂或掩模处理然后InGaN /氮化镓多重QWs表面沉积氮化镓棒。通过使用锥形GaN / InGaN克壳QW半导体棒在他们能带大梯度能量沿生长方向,高度不对称的光子二极管行为观察与低散射损失。第三,我们开发了一个dislocation-eliminating自上而下化学蒸汽蚀刻方法制作高质量的氮化镓纳米结构。InGaN-based单一QD阵列形成obelisk-shaped生长一层超薄QW而氮化镓纳米结构。 Ultrafast and high efficiency single photon generation was demonstrated by virtue of spontaneous formation of single QD on the apex of tapered GaN nanostructures. Moreover, a broad spectrum of the entire visible range was achieved by growing multiple QW structure with various QW thicknesses on the obelisk-shaped GaN nanostructures. . Fourth, we demonstrate a novel approach of the self-aligned deterministic coupling of single QDs to nanofocused plasmonic modes. Site-controlled InGaN QD array was grown by selective growth method using metal-organic chemical vapor deposition, and then a silver film was deposited on the single QD array. Using this approach, we achieved strong spontaneous emission enhancement as high as ~ 22 of QDs over a wide spectral range. Furthermore, we found that the majority of the extracted light from the quantum dot is guided toward the bottom of the pyramid with high directionality. Nanopyramid structures were detached from a substrate and the far-field radiation pattern was measured using Fourier microscopy, thus demonstrating great potential of this structure in various applications [5]. Finally, the hybrid nature of exciton polaritons opens up possibilities for developing a new concept nonlinear photonic device. We developed a novel polariton system resulting from strong coupling between a two-dimensional exciton and whispering gallery mode photon using a coreâshell hexagonal wire with GaN/InGaN multiple QW. This approach overcomes the major hurdles in the implementation of practical solid-state quantum devices and shows great promise for various applications including quantum cryptography, quantum logic gates, integrated on-chip nano-emitters, and energy-harvesting devices.
