研究和评论:材料科学杂雷竞技苹果下载志》上
菜单ISSN: 2321 - 6212
ISSN: 2321 - 6212
Noriko Kurose Aoyagi Y
日本立命馆大学,
ScientificTracks抽象:启J垫。Sci >
DOI:10.4172 / 2321 - 6212 c3 - 020
问题的声明:n型铝氮化镓(n-AlGaN)在硅基片上垂直场效应晶体管承诺设备未来的超级高功率设备除了Si,碳化硅和氮化镓设备目前正在开发。的缓冲层的生长是必不可少的沃甘Si衬底上外延层。然而,镍的绝缘材料,我们不能流电流通过缓冲层。我们报告的形成导电AlN缓冲层(以下v-AlN)和v-AlN的形成机制的细节。方法:种植v-AlN Si衬底使用金属有机化学气相沉积(金属)。铝金属点是种植在基质形成铝硅合金点连续增长的缓冲层。自发的纳米尺寸via-holes(以下via-holes)形成在AlN缓冲层由于硅的表面能量差和Si-Al合金。n-AlGaN是生长在via-holes填写。导电与via-holes形成缓冲层。结果:我们已经将绝缘AlN缓冲层导电,形成集群的via-holes缓冲层充满n-AlGaN在晶体生长。 The size of the cluster and the density are controlled and are 0.2~1μmΦ and 107~108/cm2, respectively. The current flows through these clusters filled with n-AlGaN. The mirror like n-AlGaN epitaxial layer was successfully grown on it. It is confirmed that the vertical resistivity through the conductive AlN buffer layer was 0.2Ω/ cm2 which is about 104 times smaller than that of conventional AlN. Conclusion & Significance: We have succeeded in growing the conductive AlN buffer layer on the Si substrate. Our technique and findings open a way to make vertical high power AlGaN FETs, UV-LEDs, UV sensors on the Si substrate and to realize Si on chip devices. Figure: Steps of the formation of spontaneous via-holes. At the beginning stage of the growth, a small amount of Tri-methyl Aluminum (TMA) is fed on the Si substrate to form small size Al dots (a). The Al embedded on the Si substrate interacts with the Si substrate to generate Al-Si alloy dots (b) during the Al feeding time and during the increase of temperature. At a Si content of approximately 35% β solid phase Si recrystallization is initiated as understood from the phase diagram of Si-Al alloy(c) and Si is epitaxially grown in the Al-Si alloy dots as shown in (d). No AIN growth occurs on the Al-Si alloy surface because of the difference of surface energy of Si and Si-Al alloy. Thus, via-holes of AlN are formed in the area where the Al dots are formed (e). A scanning electron microscope (SEM) image of via-holes is shown underneath of (e). Conductive n-AlGaN is filled in these via-holes by successive growth of n-AlGaN as shown in (f). Nano cluster via-holes observed by SEM are shown underneath of (f) Recent Publications 1. Kurose N, Matumato K, Yamada F, Roffi T M, Kamiya I, Iwata N and Aoyagi Y (2018) Laser induced local activation of Mg-doped GaN with high lateral resolution for high power vertical devices. AIP Advances 8: 015329-1-015329-5. 2. Kurose N and Aoyagi Y (2016) Development of high power, large area, deep ultraviolet light emitting devices using dynamic microplasma excitation (MIPE) of AlGaN multiple quantum wells. Electronics and Communications in Japan 99:3-11. 3. Kurose N, Iwata N, Kamiya I and Aoyagi Y (2014) Formation of conductive spontaneous via holes in AlN buffer layer on n+Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor. AIP Advances 4(12):123007. 4. Kurose N, Shibano K, Araki T and Aoyagi Y (2014) Development of substrate removal free vertical ultraviolet lightemitting diode (RefV-LED). AIP Advances 4:027122. 5. Aoyagi Y and Kurose N (2013) A 2-inch, large-size deep ultraviolet light-emitting device using dynamically controlled micro-plasma-excited AlGaN. Applied Physics Letters 102(4):041114.
Noriko Kurose她专长的“晶体生长工程使用金属有机化学气相沉积氮化硅半导体控制材料属性”。她发现一个可以转化为导电绝缘材料通过引入纳米via-holes自发在绝缘子使用晶体生长技术和她已经澄清了转换机制。她发明了一种制造各种垂直设备在硅衬底和Si芯片设备上。实际上,她已经成功地制造了垂直UV-LED和垂直紫外线传感器使用她的技术。此外,她成功地制造大面积面板类型微等离子体兴奋DUV光发射装置的大小超过两英寸。她被邀请到现在工作在许多国际会议。
